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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1414-18L TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz LOW INTERMODULATION DISTORTION IM3(Min.)=-25dBc at Po=36dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G1dB SYMBOL P1dB ( Ta= 25C ) UNIT dBm MIN. 42.0 5.0 -25 TYP. MAX. 42.5 6.0 5.5 28 5.5 6.0 6.0 100 CONDITIONS VDS= 9V IDSQ4.4A dB A % f = 14.0 to 14.5GHz add IM3 Two-Tone Test Po= 36.0dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) dBc A C Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT mS V A V C/W MIN. -0.7 -5 TYP. MAX. 4500 -2.8 10.0 1.8 -4.5 2.3 CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V IGS= -145A gm VGSoff IDSS VGSO Rth(c-c) Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM1414-18L ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 11.5 65 175 -65 to +175 PACKAGE OUTLINE (2-11C1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1414-18L RF PERFORMANCE 41.7 42.1 42.3 44 42.1 41.7 Output Power vs. Frequency 43 Po (dBm) 42 41 40 39 VDS= 9V IDSQ 4.4A Pin= 36.5dBm 13.5 13.75 14 14.25 14.5 14.75 15 Frequency (GHz) Output power vs. Input power 50 45 Pout(dBm) 40 35 30 25 20 15 10 15 20 25 30 35 40 Pin(dBm) 3 f=14.25GHz VDS= 9V IDSQ 4.4A 18 16 Po 14 12 10 8 6 4 2 Ids(A) Ids TIM1414-18L Power Dissipation vs. Case Temperature 100 80 60 PT(W) 40 20 0 0 40 80 Tc (C) 120 160 200 IM3 vs. Output Power Characteristics -20 VDS= 9V IDSQ 4.4A f= 14.25GHz f= 5MHz -30 IM3(dBc) -40 -50 -60 30 32 34 36 38 40 Po(dBm), Single Carrier Level 4 |
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